, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. programmable unijunction transistor/ silicon controlled switch telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 BRY39 features ? silicon controlled switch ? programmable unijunction transistor. applications ? switching applications such as: - motor control - oscillators - relay replacement - timers - pulse shapers, etc. description silicon planar pnpn switch or trigger device in a to-72 metal package. it is an integrated pnp/npn transistor pair with all electrodes accessible. quick reference data pinning pin 1 2 3 4 description cathode cathode gate anode gate (connected to case) anode fig.1 simplified outline (to-72) and symbol. symbol parameter conditions max. unit silicon controlled switch pnp transistor vebo emitter-base voltage open collector -70 v npn transistor vcbo ierm ptot tj vak ih ton u collector-base voltage repetitive peak emitter current total power dissipation junction temperature forward on-state voltage holding current turn-on time turn-off time open emitter tamb < 25 c ia = 50 ma; ia6 = 0; rkg.k = 1 0 kn iag = 10 ma; vbb = -2 v; rkg-k = 10 kn 70 -2.5 275 150 1.4 1 0.25 15 v a mw c v ma us us programmable unijunction transistor vga ia ti ip gate-anode voltage anode current (dc) junction temperature peak point current tamb < 25 c vs = 10v;rg=10k2 70 175 150 0.2 v ma c ha nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
programmable unijunction transistor/ silicon controlled switch BRY39 limiting values in accordance with the absolute maximum rating system (iec 134). symbol plot tstg tj 'amb parameter total power dissipation storage temperature junction temperature operating ambient temperature conditions tamb<25c min. - -65 - -65 max. 275 +200 150 +150 unit mw c c c silicon controlled switch vcbo vcer vceo vebo ic icm ie ierm collector-base voltage pnp npn collector-emitter voltage pnp npn collector-emitter voltage pnp npn emitter-base voltage pnp npn collector current (dc) pnp npn peak collector current pnp npn emitter current (dc) pnp npn repetitive peak emitter current pnp npn open emitter rbe = 10ka open base open collector note 1 note 2 tp= 10 us; 5 = 0.01 - - - - - - - - -70 70 70 -70 -70 5 175 175 175 -175 2.5 -2.5 v v v v v v v v ma ma ma ma a a programmable unijunction transistor vga ia gate-anode voltage anode current (av) tamb < 25 c - - 70 175 v ma
programmable unijunction transistor/ silicon controlled switch BRY39 symbol iarm 'asm dla/dt parameter repetitive peak anode current non-repetitive peak anode current rate of rise of anode current conditions tp= 10 ^s; 5 = 0.01 tp= 10us;tj = 150 c ia < 2.5 a min. - - - max. 2.5 3 20 unit a a a/fis notes 1. provided the ie rating is not exceeded. 2. during switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pf. this capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 v and a series resistance of 100 kii. thermal characteristics symbol rth j-a parameter thermal resistance from junction to ambient conditions in free air value 450 unit k/w characteristics tamb = 25 c unless otherwise specified. symbol parameter conditions min. max. unit silicon controlled switch individual pnp transistor iceo 'ebo hfe collector cut-off current emitter cut-off current dc current gain ib = 0; vce = -70 v; tj = 150 c lc = 0;veb = -70v;tj=1500c ie = 1 ma; vce = -5 v - - 3 -10 -10 15 ha ua individual npn transistor icer iebo vcesat veesat hpe cc ce fl collector cut-off current emitter cut-off current collector-emitter saturation voltage base-emitter saturation voltage dc current gain collector capacitance emitter capacitance transition frequency vce = 70v; rbe = 10kq vce = 70 v; rbe = 10 kii; tj = 150 c |c = 0;veb = 5v;tj=1500c lc= 10ma; ib= 1 ma lc= 10 ma; ib = 1 ma lc=10ma;vce = 2v ie = ie = 0; vcb = 20 v lc = ic = 0; veb = 1 v; f = 1 mhz lc = 10ma;vce = 2v;f = 100mhz - - - - - 50 - - 100 100 10 10 0.5 0.9 - 5 25 - na ha ha v v pf pf mhz combined device vak ih forward on-state voltage holding current rkg-k=10kii ia = 50 ma; iag = 0 ia = 50 ma; iag = 0; tj = -55 c ia = 1 ma; iag = 10 ma vbb = -2v;lag=10ma; rkg-k = 10 k2; see fig. 14 - ? 1.4 1.9 1.2 1 v v v rna
programmabl'e unijunction transistor/ silicon controlled switch BRY39 package outline metal-can cylindrical single-ended package; 4 leads sot18/9 - seating plane j r 10 mm i scale dimensions (millimetre dimensions are derived from the original inch dimensions) unit mm a 5.31 4.74 a 2.54 b 0.46 0.42 d 5.45 5.30 d1 4.70 4.55 j 1.05 0.95 k 1.0 0.9 l 14.5 13.5 w 0.36 a 45 outline version sot18/9 references iec b12/c7type3 jedec to-72 eiaj european projection e30 issue date
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